Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopy.

Be-doped epitaxial layers of GaAs grown by molecular beam epitaxy have been studied by local vibrational mode spectroscopy combining infrared absorption and Raman scattering. Calibration factors for both experimental techniques have been derived which enable quantitative assessments to be made of the concentrations of Be acceptors in GaAs. In Raman spectroscopy the detection limit is about 3 x 10 high 18 cm high -3 for as-grown layers only 10nm in thickness.