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Pseudomorphic AlGaInP/GaAs MODFETs, novel device concepts for simple fabrication schemes

Pseudomorphe AlGaInP/GaAs MODFETs, neues Bauelementkonzept für einfache Herstellungsprozesse
 
: Pletschen, W.; Bachem, K.H.; Tasker, P.J.; Winkler, K.

Buckley, D.N.; Ringel, S.A.; Ren, F. ; Electrochemical Society -ECS-:
Symposium on Large Area Wafer Growth and Processing for Electronic and Photonic Devices and the Twentieth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XX) 1994. Proceedings
Pennington/N.J.: ECS, 1995 (Electrochemical Society. Proceedings 94-18)
ISBN: 1-56677-075-0
pp.140-148 : Abb.,Lit.
Symposium on Large Area Wafer Growth and Processing for Electronic and Photonic Devices <1994, San Francisco/Calif.>
English
Conference Paper
Fraunhofer IAF ()
carbon doping; chemical vapour deposition; Kohlenstoffdotierung; MOCVD; MODFET

Abstract
A novel device concept of an AlGaInP/GaInAs/GaAs MOdulation Doped Field Effect Transistor (MODFET) has been developed. Two characteristic features have been incorporated in the device structure: An AlGaInP barrier which provides a larger conduction band offset than the commonly used AlGaAs and a highly carbon-doped p-type GaAs gate structure which supports a very simple, self-aligned fabrication scheme. Using 1 micrometer optical lithography we have fabricated first demonstrator devices with a current gain cut-off frequency of 60 GHz and a power gain cut-off frequency of 140 GHz. In addition, the devices show large gate-drain diode breakdown voltages in excess of 30 V and gate currents as low as 50 nA even a gate-source voltages of minus 5 V.

: http://publica.fraunhofer.de/documents/PX-30187.html