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Proximity correction for e-beam patterning on X-ray mask blanks

: Reimer, K.; Pongratz, S.

Journal of vacuum science and technology B. Microelectronics and nanometer structures 7 (1989), No.6, pp.1603-1606
ISSN: 0734-211X
ISSN: 1071-1023
ISSN: 2166-2746
ISSN: 2166-2754
Journal Article
Fraunhofer ISIT ()

A limiting factor in electron beam lithography is the proximity effect. In the special case of X-ray mask making, Monte Carlo calculations and resist profile simulations show that the proximity effect can be almost entirely eliminated by using 100 keV electrons for the resist exposure. To verify the theoretical results of the simulation, experiments with available electron energies of 20 keV and 50 keV were conducted, with good agreement. The poor efficiency of 100 keV electrons results in decreasing resist sensitivity. Electrons passing through the membrane hit holder parts behind it. The X-ray radiation generated in this way was able to expose the resist from the backside of the membrane. A diffuse image of the holder parts could be seen in the resist.