Eigenschaften von anodischen Fluoridschichten auf Hg1-xCdxTe

: Esquivias, I.; Brink, D.; Dal Colle, M.; Baars, J.; Bruder, M.

Abstract
We present results concerning the properties of anodic fluoride films grown on Hg1-xCdxTe with values of x between 0.2 and 0.3. Analysis of the growth rate indicated that the film was only partially fluoridized, with a relatively high amount of HgTe and/or elemental tellurium present. X-ray photoelectron spectroscopy confirmed the presence of two different tellurium peaks, one corresponding to tellurium bonded fluorine, and the other to tellurium bonded mercury or the elemental tellurium. The films were characterized by optical properties such as refractive index and band gap, electrical properties such as dielectric constant and resistivity, and chemical properties such as their reactivity in various solvents. It is shown that the anodic fluoride layers behave as an insulator, with a strong tendency to become oxidized. The electrical characteristics of the anodic fluoride-HgCdTe interface were determined from capacitance-voltage measurements of metal/insulator/semiconductor devices.