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The PROMPT project and its application to the three-dimensional simulation of low-pressure chemical vapor deposition processes

PROMPT-Projekt und seine Anwendung auf die dreidimensionale Simulation von chemischen Niederdruck-Gasphasenabscheidungsprozessen
: Bär, E.; Lorenz, J.


Solid-State Electronics 41 (1997), No.7, pp.939-943
ISSN: 0038-1101
Journal Article
Fraunhofer IIS B ( IISB) ()
3D-Simulation; chemical vapor deposition; chemische Gasphasenabscheidung; experimental validation; experimentelle Verifizierung; PROMPT; Siliciumdioxidabscheidung; silicon dioxide deposition; sputter deposition; Sputterabscheidung; tungsten deposition; Wolframabscheidung

Within the PROMPT project, a multidimensional Process simulation system is being developed which is designed to provide appropriate input for 3D device simulation. The concept of the software system is to merge the results from 1-, 2-, and 3-dimensional process simulators to generate the 3-dimensional (3D) geometry and dopant profile which are necessary for subsequent 3D device simulation. In addition to the multidimensional program framework, within PROMPT 3D process simulation modules are being developed for the most important process steps modifying wafer topography and doping. In this paper, an overview of the PROMPT system is given, and the novel 3D layer deposition module which is capable of simulating low-pressure chemical vapor deposition processes by using a reactive particle redistribution model is described in more detail. Applications of this module for the deposition of low-temperature oxide and tungsten using parameters evaluated independently from the 3D simulations are shown and compared to experimental data. The good agreement between simulation and experiment demonstrates the validity of the model.