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Process technology for 3D-CMOS devices

 

IEEE SOS/SOI Technology Conference
1989
SOS/SOI Technology Conference <1989, Stateline>
English
Conference Paper
Fraunhofer IFT; 2000 dem IZM eingegliedert
3D-Integration; Kristallisation; laser; MOS; polysilicon; Polysilizium; recrystallization; SOI

Abstract
An advanced 2 mym 3D-CMOS process was developed which allows the fabrication of NMOS devices in the substrate and CMOS devices in a thin laser recrystallized polysilicon layer. The processing parameters were determined carefully in order to obtain a high-quality SOI layer and to avoid any degradation of underlying substrate devices. The fabricated devices in both layers show customary bulk device quality.

: http://publica.fraunhofer.de/documents/PX-29460.html