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1800 V bipolar-mode MOSFETs. A first application of silicon wafer direct bonding (SDB) technique to apower device

 
: Nakagawa, A.; Watanabe, K.; Yamaguchi, Y.; Ohashi, H.; Furukawa, K.

International Electron Devices Meeting '86. Technical Digest
1986
pp.122-125
International Electron Devices Meeting <32, 1986, Los Angeles>
English
Conference Paper
Fraunhofer IMS ()

: http://publica.fraunhofer.de/documents/PX-2946.html