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Process simulation at FhG-AIS

: Lorenz, J.

6th VLSI Process/Device Modelling Workshop. Proceedings
VLSI Process - Device Modelling Workshop <6, 1989, Osaka>
Conference Paper
Fraunhofer IIS B ( IISB) ()
diffusion; ion implantation; Ionenimplantation; lateral distribution; laterale Verteilung; oxidation; Phosphordiffusion; phosphorus diffusion; process simulation; Prozeßsimulation

Since the publication of the first one-dimensional process simulation programs, increasing activities have been carried out in the development and improvement of the physical models involved and the development of more general programs which may be used for simulations in two or three dimensions. In this paper, some aspects of recent work carried out at FhG-AIS are discussed.