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1989
Conference Paper
Title

Process simulation at FhG-AIS

Abstract
Since the publication of the first one-dimensional process simulation programs, increasing activities have been carried out in the development and improvement of the physical models involved and the development of more general programs which may be used for simulations in two or three dimensions. In this paper, some aspects of recent work carried out at FhG-AIS are discussed.
Author(s)
Lorenz, J.  
Mainwork
6th VLSI Process/Device Modelling Workshop. Proceedings  
Conference
VLSI Process - Device Modelling Workshop 1989  
Language
English
IIS-B  
Keyword(s)
  • diffusion

  • ion implantation

  • Ionenimplantation

  • lateral distribution

  • laterale Verteilung

  • oxidation

  • Phosphordiffusion

  • phosphorus diffusion

  • process simulation

  • Prozeßsimulation

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