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Process simulation at FhG-AIS

	6th VLSI Process/Device Modelling Workshop. Proceedings 1989
	VLSI Process - Device Modelling Workshop <6, 1989, Osaka>

	English
	Conference Paper
	Fraunhofer IIS B ( IISB) ()
	diffusion; ion implantation; Ionenimplantation; lateral distribution; laterale Verteilung; oxidation; Phosphordiffusion; phosphorus diffusion; process simulation; Prozeßsimulation

Abstract
Since the publication of the first one-dimensional process simulation programs, increasing activities have been carried out in the development and improvement of the physical models involved and the development of more general programs which may be used for simulations in two or three dimensions. In this paper, some aspects of recent work carried out at FhG-AIS are discussed.

: http://publica.fraunhofer.de/documents/PX-29454.html