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Process latitude for sub-200 nanometer synchroton orbital radiation X-ray lithography

: Oertel, H.K.; Chlebek, J.; Weiß, M.


Japanese Journal of Applied Physics. Part 1, Regular papers, short notes and review papers 32 (1993), No.12B, pp.5966-5970
ISSN: 0021-4922
International Micro Process Conference <6, 1993, Hiroshima>
Journal Article, Conference Paper
Fraunhofer ISIT ()
photoresists; synchrotron radiation; X-ray lithography

Image intensity profile and resist profile calculations using the X-ray modeling and simulation program are presented for storagering X-ray lithography proximity printing. The calculations indicate that there exists a sufficiently wide process window for the replication of 100-nm-wide absorber features, using an optimized set of parameters. The effect of nonvertical absorber sidewalls on the process window is investigated.