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Preparation of cubic boron nitride films by reactive sputtering from a boron nitride target

: Schütze, A.; Bewilogua, K.; Lüthje, H.; Kouptsidis, S.


Diamond and Related Materials 5 (1996), No.10, pp.1130-1135
ISSN: 0925-9635
Journal Article
Fraunhofer IST ()

PVD sputter deposition of cubic boron nitride (cBN) on Si(001) has been carried out using electrically conducting B4C as target material. While the target was powered with a r.f. generator the substrate electrode was connected to a d.c. power supply or a d.c.-pulse generator, respectively. The d.c. substrate bias was varied between -150... -200 V. As reactive sputter gas we used an Ar-N2 mixture with a N2 content of 10 per cent. The cBN content has been determined using the intensity ratio of the infrared absorption bands of the cubic (near 1100 cm(exp -1) and the hexagonal phase (near 1400 cm(exp -1), respectively. The thickness of the deposited films was about 0.2 mu m. The delamination process of films thicker than that has been studied using scanning electron microscopy (SEM). It turned out, that the beginning of the growth of the cubic phase could be correlated with an increase of the measured current at the substrate electrode. The reproducibility of the cubic fraction has been i mproved controlling this current. Additionally some results are presented from investigations, where the substrate electrode has been powered by a d.c.-pulse generator.