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Preparation of c-BN containing films by reactive r.f. sputtering

: Bewilogua, K.; Buth, J.; Hübsch, H.; Grischke, M.


Diamond and Related Materials 2 (1992), No.8, pp.1206-1210
ISSN: 0925-9635
Diamond Films <3, 1992, Heidelberg>
Journal Article, Conference Paper
Fraunhofer IST ()
adhesion; cubic boron nitride; electron probe microanalysis; hexagonal boron nitride; infrared spectroscopy; reactive sputtering; stress; wear resistance

The reactive rf sputtering of a hexagonal boron nitride (h-BN) target successfully could be used to deposit boron nitride films. The substrate temperatures did not exceed 300 degree C. It was found that the films contained c-BN only if they were sputtered reactively in an Ar-N2 mixture at sufficiently high negative self bias values. As a measure for the c-BN content the relative absorption coefficient Qc of the infrared absorption band near 1060 cm-1 was used. The maximum c-BN content could be estimated for films prepared with 3 % N2 in the working gas. Furthermore Qc increased with increasing deposition time, indicating changes in the growth mechanism. Analytical studies supported the suggestion that the films have an amorphous-like structure. In many cases te films containing c-BN partially delaminated from the silicon substrates. However, these adhesion fails could not be correlated to the internal stresses. The wear resistance of the c-BN containing films was clearly higher than th at of h-BN deposits.