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1994
Conference Paper
Titel
Preparation and Application of PZT thick film
Abstract
Preparation technology and ferroelectric properties of 100-150mym PZT thick films on alumina substrates (20sqcm) are reported. Thick films prepared have a remanent polarization of 10-15myC/sqcm and a coercitivity of 8-1OkV/cm. Problems connected with the preparation of PZT thick films are discussed. Preventing of PbO evaporation proved to be the main problem. Low sintering PZT materials and a special sintering arrangement are required to maintain stoichlometry. A high PbO loss during entering is connected with inhibited grain growth and complete loss of piezoelectric properties.
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