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40 Gbit/s 1.55 mu m pin-HEMT photoreceiver monolithically integrated on 3in GaAs substrate

40 Gbit/s 1.55 mu m pin-HEMT Photoempfänger auf einem 3-Zoll GaAs Substrat


Electronics Letters 34 (1998), No.21, pp.2060-2062 : Ill.
ISSN: 0013-5194
Journal Article
Fraunhofer IAF ()
monolithic integration; monolithische Integration; Optoelektronik; Photoempfänger; photoreceiver

A 36.5GHz bandwidth, 1.55 mu m wavelength pin-HEMT photoreceiver with a distributed amplifier has been monolithically integrated on a 3in GaAs substrate using a 0.15 mu m gate-length pseudomorphic HEMT process. The pin photodiode has a responsivity of 0.34A/W. Clearly-opened eye diagrams for a 4OGbit/s optical data stream have been demonstrated.