40 Gbit/s 1.55 mu m pin-HEMT photoreceiver monolithically integrated on 3in GaAs substrate

A 36.5GHz bandwidth, 1.55 mu m wavelength pin-HEMT photoreceiver with a distributed amplifier has been monolithically integrated on a 3in GaAs substrate using a 0.15 mu m gate-length pseudomorphic HEMT process. The pin photodiode has a responsivity of 0.34A/W. Clearly-opened eye diagrams for a 4OGbit/s optical data stream have been demonstrated.