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35-40 GHz monolithic VCO's utilizing high-speed GaInP/GaAs HBT's

35-40 GHz monolithisch integrierte VCO's mit schnellen GaInP/GaAs-HBT's
 
: Riepe, K.; Leier, H.; Marten, A.; Güttich, U.; Dieudonne, J.M.; Bachem, K.H.

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IEEE Microwave and Guided Wave Letters 4 (1994), No.8, pp.274-276 : Abb., Tab., Lit.
ISSN: 1051-8207
English
Journal Article
Fraunhofer IAF ()
carbon doped base; chemical vapour deposition; GaInP/GaAs-HBT; kohlenstoffdotierte Basis; MOCVD; monolithic integrated oscillator; monolithisch integrierter Oszillator

Abstract
Design, fabrication and performance of Ka-band voltage-controlled oscillators (VCO's) are described. High-speed self-aligned GaInP/GaAs heterojunction bipolar transistors (HBT's) as active devices and varactor diodes using the basecollector junction of the HBT structure are implemented in the VCO's. The HBT's have an emitter area of 2 x 1.5 micrometers x 10 micrometers and incorporate a highly carbon doped base layer and a thin GaInP hole barrier. Oscillators with center frequencies of 35, 37, and 40 GHz exhibit tuning ranges of up to 1 GHz and typical output powers of 1-3.5 dBm. Best measured phase-noise at 1 MHz off carrier is -107 dBc/Hz.

: http://publica.fraunhofer.de/documents/PX-2892.html