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Point defects in silicon carbide.

Punktdefekte in Siliziumkarbid
: Schneider, J.; Maier, K.


Physica. B 185 (1993), pp.199-206 : Abb.,Lit.
ISSN: 0921-4526
Journal Article
Fraunhofer IAF ()
acceptor; Akzeptor; Donator; donor; electron spin resonance; Elektronenspinresonanz; optical spectroscopy; optische Spektroskopie; transition metal; Übergangsmetall

A review is given on recent progress made in a microscopic understanding of point defects in silicon carbide (SiC). Defect structures to be discussed include shallow nitrogen donors, group-3 acceptors, the transition metal impurities vanadium and titanium and radiation induced defects, like the silicon vacancy in SiC.