1995
Journal Article
Title

30 GHz static frequency divider using a 0.2 mym AlGaAs/GaAs/AlGaAs HEMT technology

Other Title
30 GHz Frequenzteiler unter Verwendung einer 0,2 Mikrometer AlGaAs/GaAs/AlGaAs HEMT Technologie
Abstract
A frequency devider based on AlGaAs/GaAs/AlGaAs quantum well FETs with 0.2 micrometer gate length has been designed and fabricated. The devider can be operated up to 30 GHz with a single-ended input signal with an input resistance of 50 Ohm. The output signals are differential with both internal load resistance at 50 Ohm.
Author(s)
Lang, M.
Berroth, M.
Rieger-Motzer, M.
Hülsmann, A.
Hoffmann, P.
Kaufel, G.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Raynor, B.
Journal
DOI
Language
English
Keyword(s)