1993
Conference Paper
Title

30 GHz direct modulation in p-doped In0.35Ga0.65As/GaAs MQW lasers

Other Title
30 GHz Direkt-Modulation in p-dotierten In0.35Ga0.65As/GaAs MQW-Lasern
Abstract
We demonstrate p-type modulation-doped strained- layer Insub0.35Gasub0.65As/GaAs multiple quantum well lasers which achieve 3-dB direct modulation bandwidths up to 30 GHz in a simple 3x200 Myqm mesa structure, under DC bias conditions and at a heat- sink temperature of 25 degree C.
Author(s)
Ralston, J.D.
Weisser, S.
Larkins, E.C.
Esquivias, I.
Tasker, P.J.
Fleissner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Rosenzweig, Josef  
Mainwork
Conference
Language
English
Keyword(s)