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25-W CW high-brightness tapered semiconductor laser-array

Halbleiterlaser-Array mit trapezförmigen hochbrillanten Emittern und 25 W kontinuierlicher Ausgangsleistung
 

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IEEE Photonics Technology Letters 11 (1999), No.4, pp.412 ff.
ISSN: 1041-1135
English
Journal Article
Fraunhofer IAF ()
beam filamentation; beam quality; high-brightness; high-power semiconductor laser-array; Hochleistungs-Halbleiter Array; hohe Brillianz; low-modal gain; niedriger molekularer Gewinn; Strahlfilamente; Strahlqualität

Abstract
High-power high-brightness laser diode arrays comprising 25 tapered laser oscillators have been fabricated. The devices, based on recently developed low-modal gain epitaxial layer-structures, deliver a maximum output power of more than 25-W continuous-wave. A high beam quality uniformity is achieved with an average beam quality factor of M2= 2.6 for each individual emitter. Compared to conventional broad-area laser diode arrays the brightness of each emitter is improved by more than an order of magnitude in the slow-axis direction. These arrays have the potential to produce optical power densities as high as 1 MW/cm2.

: http://publica.fraunhofer.de/documents/PX-2883.html