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20 Gbit/s modulation of 1.55 mu m compressively strained InGaAs/InAlGaAs/InP multiple quantum well ridge laser diodes grown by solid source molecular beam epitaxy

20 Gbit/s Modulation von 1.55 mu m druckverspannten InGaAs/InAlGaAs/InP Mehrfach-Quantum Wells Laserdioden gewachsen mit Feststoffquellen-Molekularstrahlepitaxie


Tenth International Conference on Indium Phosphide and Related Materials 1998. Conference proceedings
Piscataway, NJ: IEEE, 1998
ISBN: 0-7803-4220-8
pp.395-398 : Ill., Lit.
International Conference on Indium Phosphide and Related Materials (IPRM) <10, 1998, Tsukuba>
Conference Paper
Fraunhofer IAF ()
1.55 mu m laser; 1.55 mu m Laserdiode; 20 Gbit modulation; Feststoffquellen-MBE; solid source MBE

We describe the realization of 1.55 mu m InGaAs/InAlGaAs MQW ridge waveguide laser diodes with InP cladding layers grown by molecular beam epitaxy with solid sources (SSMBE) and valved cracker cells for phosphorus and arsenic. For lasers with 10 QWs, a threshold current density per quantum well of 150 Acm(-2) was extrapolated for infinitely long cavities. 4x200 mu m2 devices exhibit a T(0)-value of 85 K in the temperature range from 20 to 85 deg C and showed a maximum 3 dB modulation bandwidth of 16.5 GHz, capable of 20 Gbit/s NRZ large signal modulation with an extinction ratio of 6 dB. These results compare well with MQW lasers grown by MOCVD.