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20 Gbit/s fully integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver

20 Gbit/s vollständig integrierter optoelektronischer Empfänger bestehend aus einer MSM-Photodiode und AlGaAs/GaAs-HEMTs
 

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Electronics Letters 32 (1996), pp.683-685
ISSN: 0013-5194
English
Journal Article
Fraunhofer IAF ()
integrated optoelectronics; integrierte Optoelektronik; optical receivers; optischer Empfänger

Abstract
A 0.85 mu m wavelength monolithic integrated optoelectronic receiver consisting of a GaAs MSM photodiode and a multi-stage AlGaAs-GaAs HEMT amplifier has been fabricated. The transimpedance is 12.6 k Omega (into 50 Omega W) and the sensitivity better than 14.7 dBm (at 12.5 Gbit/s, BER=10-9). The bandwidth of 13.0 GHz implies suitability for transmission rates up to 20 Gbit/s.

: http://publica.fraunhofer.de/documents/PX-2873.html