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20-40 Gbit/s 0.2 mu m GaAs HEMT chip set for optical data receiver

20-40 Gbit/s 0.2 Mikrometer GaAs HEMT Chip-Satz für optoelektronische Datenempfänger
 

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IEEE Electron Devices Society:
18th GaAs IC Symposium 1996. Technical digest
Piscataway, NJ: IEEE, 1996
ISBN: 0-7803-3504-X
ISBN: 0-7803-3505-8
pp.133-136
GaAs IC Symposium <18, 1996, Orlando/Fla.>
English
Conference Paper
Fraunhofer IAF ()
GaAs; HEMT; integrated circuit; integrierte Schaltung; optical data receiver; optoelektronischer Datenempfänger

Abstract
Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed a chip set for 20-40 Gbit/s transmission systems. In this paper we describe five chips for the receiver side. The presented results have been measured on wafer.

: http://publica.fraunhofer.de/documents/PX-2869.html