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  4. 20-40 Gbit/s 0.2 mu m GaAs HEMT chip set for optical data receiver
 
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1996
Conference Paper
Title

20-40 Gbit/s 0.2 mu m GaAs HEMT chip set for optical data receiver

Other Title
20-40 Gbit/s 0.2 Mikrometer GaAs HEMT Chip-Satz für optoelektronische Datenempfänger
Abstract
Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed a chip set for 20-40 Gbit/s transmission systems. In this paper we describe five chips for the receiver side. The presented results have been measured on wafer.
Author(s)
Berroth, M.
Lang, M.
Wang, Z.-G.
Lao, Z.
Thiede, A.
Rieger-Motzer, M.
Bronner, Wolfgang  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kaufel, G.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Hülsmann, A.
Schneider, J.
Mainwork
18th GaAs IC Symposium 1996. Technical digest  
Conference
GaAs IC Symposium 1996  
DOI
10.1109/GAAS.1996.567826
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • GaAs

  • HEMT

  • integrated circuit

  • integrierte Schaltung

  • optical data receiver

  • optoelektronischer Datenempfänger

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