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  4. 17 GHz broadband amplifier with 25 dB gain using a 0.3 mym AlGaAs/GaAs/AlGaAs HEMT technology
 
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1995
Journal Article
Title

17 GHz broadband amplifier with 25 dB gain using a 0.3 mym AlGaAs/GaAs/AlGaAs HEMT technology

Other Title
17 GHz Breitbandverstärker unter Verwendung einer 0,3 Mikrometer AlGaAs/GaAs/AlGaAs HEMT Technologie
Abstract
A broadband amplifier chip based on AlGaAs/GaAs/AlGaAs quantum well FETs with 0.3 micrometer gate length has been designed and fabricated. The amplifier can be operated with single-ended or differential inputs with an input resistance of 50 Ohm. The output signals are differential with both internal load resistance at 100 Ohm, the chip area is 1x1 mm2, and the power consumption is about 375 mW.
Author(s)
Lang, M.
Berroth, M.
Rieger-Motzer, M.
Hülsmann, A.
Hoffmann, P.
Kaufel, G.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Raynor, B.
Wang, Z.-G.
Journal
Electronics Letters  
DOI
10.1049/el:19951352
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Breitbandverstärker

  • differential amplifiers

  • HEMT

  • high electron mobility transistors

  • operational amplifiers

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