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17 GHz broadband amplifier with 25 dB gain using a 0.3 mym AlGaAs/GaAs/AlGaAs HEMT technology

17 GHz Breitbandverstärker unter Verwendung einer 0,3 Mikrometer AlGaAs/GaAs/AlGaAs HEMT Technologie

: Lang, M.; Berroth, M.; Rieger-Motzer, M.; Hülsmann, A.; Hoffmann, P.; Kaufel, G.; Köhler, K.; Raynor, B.; Wang, Z.-G.

DOI: 10.1049/el:19951352

	Electronics Letters 31 (1995), No.23, pp.1993-1995 ISSN: 0013-5194

	English
	Journal Article
	Fraunhofer IAF ()
	Breitbandverstärker; differential amplifiers; HEMT; high electron mobility transistors; operational amplifiers

Abstract
A broadband amplifier chip based on AlGaAs/GaAs/AlGaAs quantum well FETs with 0.3 micrometer gate length has been designed and fabricated. The amplifier can be operated with single-ended or differential inputs with an input resistance of 50 Ohm. The output signals are differential with both internal load resistance at 100 Ohm, the chip area is 1x1 mm2, and the power consumption is about 375 mW.

: http://publica.fraunhofer.de/documents/PX-2859.html