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16 GHz GaAs/AlGaAs multiple quantum well laser with vertically compact waveguide structure.

16 GHz GaAs/AlGaAs MQW-Laser mit vertikal kompakter Wellenleiter-Struktur

Bowers, J.E. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
High-Speed Electronics and Optoelectronics : 26 March 1992, Somerset, New Jersey
Bellingham/Wash.: SPIE, 1992 (SPIE Proceedings Series 1680)
ISBN: 0-8194-0841-7
Conference "High-Speed Electronics and Optoelectronics" <1992, Somerset/NJ>
Conference Paper
Fraunhofer IAF ()
GaAs/AlGaAs; high-speed; Hochgeschwindigkeit; optical data transmission; optische Daten-Übertragung; Quantum-Well-Laserdiode; quantum well lasers

A GaAs/AlsubxGasub1-xAs multiple quantum well laser wi electrical modulation bandwidth of 16 GHz has been dev Optimized design of the waveguide, including implement average Al mole fraction (Xsubeff equals 0.8) GaAs/AlA period superlattice cladding layers, together with a c geometry, has resulted in a vertically compact laser s for integration. vertically compact laser structure suitable for integration.