15 Gbit/s integrated laser diode driver using 0,3 mym gate length quantum well transistors.

Nowotny, U.; Gotzeina, W.; Hofmann, P.; Hülsmann, A.; Raynor, B.; Schneider, J.; Berroth, M.; Kaufel, G.; Köhler, Klaus; Wang, Z.-G.

1992

Journal Article

Abstract

An integrated laser diode driver was realised using enhancement/depletion 0.3 Mym recessed-gate AlGaAs/GaAs quantum well transistors. Fully-open eye diagrams were observed at bit rates up to 10Gbit/s with 50 Omega loads. The maximum DC and modulation current were 25 and 45 mA, respectively. The power consumption is less than 450 mW.

Author(s)

Nowotny, U.

Gotzeina, W.

Hofmann, P.

Hülsmann, A.

Raynor, B.

Schneider, J.

Berroth, M.

Kaufel, G.

Köhler, Klaus

Fraunhofer-Institut für Angewandte Festkörperphysik IAF

Wang, Z.-G.

Journal

Electronics Letters

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15 Gbit/s integrated laser diode driver using 0,3 mym gate length quantum well transistors.