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  4. 11,6 Gbps 1 to 4 demultiplexer using double pulse doped Quantum Well GaAs/AlGaAs transistors.
 
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1991
Journal Article
Title

11,6 Gbps 1 to 4 demultiplexer using double pulse doped Quantum Well GaAs/AlGaAs transistors.

Other Title
11,6 Gbps 1 zu 4 Demultiplexer unter Verwendung von Doppel Puls dotierten GaAs/AlGaAs Transistoren
Abstract
An ultrahigh speed 4 bit demultiplexer circuit has been developed and fabricated using a recessed gate process for enhancement and depletion transistors with 0:3mym gate length. First results show a data rate of 11-6 Gbit/s and a power consumption of 165 mW at 0-85 V supply voltage, including four 50Omega buffers.
Author(s)
Lang, M.
Nowotny, U.
Berroth, M.
Journal
Electronics Letters  
Open Access
DOI
10.1049/el:19910289
Additional full text version
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Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • demultiplexer

  • high speed

  • Hochgeschwindigkeit

  • low power

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