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11,6 Gbps 1 to 4 demultiplexer using double pulse doped Quantum Well GaAs/AlGaAs transistors.

11,6 Gbps 1 zu 4 Demultiplexer unter Verwendung von Doppel Puls dotierten GaAs/AlGaAs Transistoren
: Lang, M.; Nowotny, U.; Berroth, M.


Electronics Letters 27 (1991), No.5, pp.459-460 : Abb.,Tab.
ISSN: 0013-5194
Journal Article
Fraunhofer IAF ()
demultiplexer; high speed; Hochgeschwindigkeit; low power

An ultrahigh speed 4 bit demultiplexer circuit has been developed and fabricated using a recessed gate process for enhancement and depletion transistors with 0:3mym gate length. First results show a data rate of 11-6 Gbit/s and a power consumption of 165 mW at 0-85 V supply voltage, including four 50Omega buffers.