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1988
Journal Article
Titel
Photovoltaic infrared sensor array in heteroepitaxial narrow gap lead-chalcogenides on silicon.
Alternative
Photovoltaisches Infrarot-Sensor-Array mittels Heteroepitaxie von Schmalband-Blei-Chalkogeniden auf Silizium
Abstract
Linear arrays of photovoltaic IR-sensors for thermal imaging applications have been fabricated for the first time in narrow gap semiconductor layers grown heteroepitaxially on Si-substrates. Heteroepitaxy was achieved using intermediate stacked CaF2-BaF2 bilayers to overcome the large lattice- and thermal expansion mismatch between Si and lead-chalcogenides. Sensors fabricated in narrow gap PbTe have about 5.7 mym cut-off wavelength at 90 K and quantum efficiencies around 70%. Resistance-area products are up to 500 square cm with mean value of about 150 square cm for 66 element linear arrays, well above the room temperature photon background noise limit. Sensor arrays with shorter cut-off wavelength were fabricated in the same manner in epitaxial PbEuSe on fluoride covered Si-substrates. (IPM)
Author(s)
Language
English