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Photoresponse of the FR3 electron-spin-resonance signal in GaAs

Photorespons des FR3 Elektronen-Spin-Resonanz Signals in GaAs
: Wilkening, W.; Baeumler, M.; Kaufmann, U.


Physical Review. B 36 (1987), No.14, pp.7726-7729 : Abb.,Lit.
ISSN: 0163-1829
ISSN: 1098-0121
ISSN: 0556-2805
ISSN: 2469-9950
Journal Article
Fraunhofer IAF ()
ESR; GaAs; Störstelle(tief)

The photoresponse of the FR3 electron-spin-resonance (ESR) signal in GaAs has been studied. Excitation and quenching of the FR3 ESR is shown to result from the optically induced charge exchange between the FR3 center and the As sub Ga antisite. The FR3 ESR can be persistently excited with photons in the range 1.0 eV smaller hv smaller 1.3 eV. It is demonstrated that this-behavior is a direct consequence of the metastability of the As sub Ga antisite. Conclusive evidence for the acceptor nature of the FR3 center is presented, the corresponding level lying between E sub v +0.03 eV and E sub v+0.52 eV. (IAF)