• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Artikel
  4. Photon assisted implantation -PAI-
 
  • Details
  • Full
Options
1993
Journal Article
Title

Photon assisted implantation -PAI-

Abstract
The junction depth reduction for B implanted under PA conditions in Si was investigated.It was found that low energy implantation and short annealing times promote higher values of junction depth reduction.Under PA conditions, an altered defect structure is produced which influences the diffusion of dopants.The combination of the modified defect distribution with low dose rate implantation may reduce the number of scattering centers for charge carriers, which affects sheet resistance.
Author(s)
Biro, L.P.
Gyulai, J.
Ryssel, H.
Frey, L.
Kormany, T.
Tuan, N.M.
Journal
Nuclear instruments and methods in physics research, Section A. Accelerators, spectrometers, detectors and associated equipment  
DOI
10.1016/0168-583X(93)96191-E
Language
English
IIS-B  
Keyword(s)
  • boron

  • implantation

  • ion implantation

  • laser

  • photon assistance

  • pn-junction

  • profile

  • silicon

  • thermal annealing

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024