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1990
Conference Paper
Titel
A photoluminescence study of the transition from non-degenerate to degenerate doping in n-type silicon doped GaAs/AlGaAs quantum wells
Alternative
Photolumineszenzstudie des Überganges von nicht-entarteter zu entarteter Dotierung in Si-dotierten GaAs/AlGaAs Quantum Wells
Abstract
The transition from non-degenerate to degenerate doping in silicon center-doped 100 A GaAs/AlGaAs quantum wells has been studied via the observed excitonic and free carrier related photoluminescence (PL) and PL excitation (PLE) spectra. The critical doping level is about 1.0x10 high12qcm in 2D, a factor 2-3 higher than in bulk GaAs (3D). The observed effects of high donor doping on recombination dynamics and non-radiative processes are discussed.
Author(s)