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Photogalvanic effect in asymmetric quantum wells and superlattices

Photogalvanischer Effect in asymmetrischen Quantenfilmen und Übergittern


Superlattices and Microstructures 23 (1998), No.6, pp.1289-1295
ISSN: 0749-6036
Journal Article
Fraunhofer IAF ()
infrared detector; Infrarotdetektor; intersubband transition; Intersubband-Übergang; photogalvanic effect; photogalvanischer Effekt; quantum wells; superlattice; Übergitter

We have investigated the influence of the final states of bound-to-continuum transitions within the conduction band of asymmetric quantum well structures on the photocurrent. This influence manifests itself by an energy-dependent oscillation of the current direction. We observe pronounced oscillations at zero bias voltage in a double quantum well structure, induced by an asymmetric excitation into continuum states with positive and negative momentum, i.e. by a photogalvanic effect (PGE). If this effect is superimposed on an asymmetric backrelaxation, similar oscillations are observed in the spectrum when the latter asymmetry is compensated by an external electric field. Theoretically, we find a strong relation between the PGE and a quantum interference effect occurring in the a strong re continuum.