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  4. Photoconductivity of undoped, nitrogen- and boron-doped CVD- and synthetic diamond
 
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1998
Journal Article
Title

Photoconductivity of undoped, nitrogen- and boron-doped CVD- and synthetic diamond

Abstract
Nitrogen-doped (CVD- and synthetic type IIa and Ib diamonds were investigated by the constant photocurrent method (CPM). Nominally undoped CVD-films containing nitrogen show broad absorption bands with threshold energies at 1, 2, 3, 3 and 4.2 eV. The typical nitrogen donor absorption band with a threshold at 1.7 eV is partially masked by the eV band in CVD-films. The absorption bands are too broad to be described by simle theories based on photoionization of single unbroadened impurity levels. Boron-doped CVD- and type IIb synthetic diamond was studied by photoconductivity and photothermal ionization in the near infra-red. The large electron-phonon coupling in diamond gives rise to oscillatory photoconductivity minima due to fast capture of holes by the excited states of boron accepters. In CVD-films with boron concentrations around 10(19) cm(-3), the oscillation pattern inverts at low temperatures and sharp minima were found in the spectrum.
Author(s)
Rohrer, E.
Nebel, C.E.
Stutzmann, M.
Floter, A.
Zachai, R.
Jiang, X.
Klages, C.-P.
Journal
Diamond and Related Materials  
DOI
10.1016/S0925-9635(97)00318-X
Language
English
Fraunhofer-Institut für Schicht- und Oberflächentechnik IST  
Keyword(s)
  • photoconductivity

  • CVD- and synthetic diamond

  • boron

  • nitrogen

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