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10 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs.

10 Gbit/s monolithisch integrierter optoelektronischer Empfänger basierend auf einer MSM-Photodiode und AlGaAs/GaAs HEMTs
 

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Microelectronic engineering 15 (1991), pp.275-278 : Abb.,Lit.
ISSN: 0167-9317
European Solid State Device Research Conference <21, 1991, Montreux>
English
Conference Paper
Fraunhofer IAF ()
GaAs; HEMT; III-V Halbleiter; III-V semiconductors; MSM-Photodiode; optoelectronics; Optoelektronik

Abstract
A 10 Gibt/s monolithic integrated optoelectronic receiver has been fabricated with a metalsemiconductor-metal (MSM) photodiode and enhancement / depletion 0.5 mym recessed-gate AlGaAs/GaAs HEMTs. A -3 dB bandwidth of 11.3 GHz has been achieved.

: http://publica.fraunhofer.de/documents/PX-2834.html