Langwelliger 10Gbit/s monolithisch integrierter Empfänger auf einem GaAs-Substrat

: Hurm, V.; Benz, W.; Berroth, M.; Bronner, W.; Fink, T.; Haupt, M.; Köhler, K.; Ludwig, M.; Raynor, B.; Rosenzweig, J.

Abstract
The first 10 Gbit/s long-wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using a 0.3 mu m gate length AlGaAs/GaAs HEMT process. At a wavelength of 1.3 mu m the integrated InGaAs MSM photodiode has a DC responsivity of 0.34 A/W. The photoreceiver bandwidth is 7.1 GHz and its sensitivity is better than -14.7 dBm (BER=10-9)