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1996
Journal Article
Titel
10 Gbit/s long-wavelength monolithic integrated optoelectronic receeiver grown on GaAs
Alternative
Langwelliger 10Gbit/s monolithisch integrierter Empfänger auf einem GaAs-Substrat
Abstract
The first 10 Gbit/s long-wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using a 0.3 mu m gate length AlGaAs/GaAs HEMT process. At a wavelength of 1.3 mu m the integrated InGaAs MSM photodiode has a DC responsivity of 0.34 A/W. The photoreceiver bandwidth is 7.1 GHz and its sensitivity is better than -14.7 dBm (BER=10-9)
Author(s)