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10-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links

10-20 Gbit/s GaAs/AlGaAs HEMT ICs für Hochgeschwindigkeitsdatenverbindungen

Institute of Electrical and Electronics Engineers -IEEE-:
14th Annual GaAs IC Symposium 1992. Technical digest
New York/N.Y.: IEEE, 1992
ISBN: 0-7803-0773-9
ISBN: 0-7803-0774-7
ISBN: 0-7803-0775-5
pp.291-294 : Abb., Lit.
GaAs IC Symposium <14, 1992, Miami Beach, Fla.>
Conference Paper
Fraunhofer IAF ()
demultiplexer; laser driver; Lasertreiber; multiplexer; optical data link; optische Datenverbindung; transimpedance amplifier; Transimpedanzverstärker

A set of ICs has been developed for the high speed data link at data rates above 10 Gbit/s. A recessed gate process for double pulse doped quantum well transistors has been used with e-beam written 0.3 Mym gates. A 4 bit multiplexer and a laser diode driver for the transmitter as well as transimpedance amplifier, bit synchronizer and 4 bit demultiplexer for the receiver have been successfully operated with data rates up to 20 Gbit/s.