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8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 mym recessed-gate AlGaAs/GaAs HEMTs.

Monolithisch integrierter optoelektronischer Empfänger mit einer Bandbreite von 8.2 GHz basierend auf einer MSM-Photodiode und 0.5 mym-Recessed-Gate AlGaAs/GaAs HEMTs
 

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Electronics Letters 27 (1991), No.9, pp.734-735 : Abb.,Lit.
ISSN: 0013-5194
English
Journal Article
Fraunhofer IAF ()
Empfänger; HEMT; optical communication; optische Kommunikation; optoelectronics; Optoelektronik; photodiode; receiver

Abstract
An 8.2 GHz bandwidth monolithic optoelectronic receiver consisting of an MSM photodiode, a transimpedance amplifier, and a 50 omega output buffer has been fabricated using an enhancement/depletion 0.5 mym recessed-gate AlGaAs/GaAs HEMT process. Successful operation at data rates up to 10 Gbit/s has been demonstrated.

: http://publica.fraunhofer.de/documents/PX-2821.html