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Performance of carbon monoxide-sensitive MOSFET's with metal-oxide semiconductor gates

Parallelausgabe: Publications 1985. IMS-Duisburg.
 
: Dobos, K.; Zimmer, G.

IEEE transactions on electron devices 32 (1985), No.7, pp.1165 ff : Abb.,Lit.
ISSN: 0018-9383
English
Journal Article
Fraunhofer IMS ()

Abstract
A multilayer PdO-Pd-gate metallization was investigated at a MOS-CO sensor. This type of metallization gives a high CO sensitivity and a good electrical control of the transistor. The performance of this sensor was investigated in comparison to a commercial SnO2 resistor CO sensor. (IMS)

: http://publica.fraunhofer.de/documents/PX-28177.html