Percolation theory and resist development in X-ray lithography

A two parameter model for the percolational development process of high speed X-ray photoresists is presented with corresponding computer simulation in two and three space dimensions. The number of the parameters for the description of the resist response are the size of the resist volume affected by a single photoabsorption event and the ratio of the development rates of irradiated and non-irradiated areas. The roughness of resist development fronts is characterized in terms of their fractal dimension.