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1993
Journal Article
Titel
7.4 Gbit/s monolithically integrated GaAs/AlGaAs laser diode-laser driver structure.
Alternative
Monolithisch integrierte GaAs/AlGaAs Laser-Lasertreiber-Struktur bis 7.4 Gbit/s
Abstract
A molecular beam epitaxy (MBE) grown (GaAs/AlGaAs multiquantum well laser, monolithically integrated with a laser driver, was realised on 2 inch GaAs substrate wafers. In an optical data communication setup, performance up to data rates of 7.4Gbit/s was demonstrated.
Author(s)