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  4. Pb1-xEuxSe photodiodes for the 3 - 5 mym ranges.
 
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1991
Journal Article
Title

Pb1-xEuxSe photodiodes for the 3 - 5 mym ranges.

Other Title
Pb1-xEuxSe-Photodioden für den 3 - 5 mym Bereich
Abstract
A series of five photodiode detectors have been fabricated using MBE growth techniques from the ternary compound PbEuSe with values of x ranging from 0 to about 10 mol. %. With the europium concentrations the cut-off wavelength can be tuned from 6.7 micrometer (x - 0) to 2.7 micrometer (x = 0.1) at 95 K. With the growth of a graded cap layer the spectral quantum efficiency was increased by aproximately a factor 2 compared with diodes previously fabricated without the cap layer. RoA and spectral quantum efficiency values were determined over a temperature range of 95 - 300 K. The measured values of RoA are compared to calculated values of RoA based on a diffusion limited model and an attempt is made to explain discrepancies.
Author(s)
Guan, Y.
Halford, B.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Tacke, M.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Journal
Infrared physics  
Language
English
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Keyword(s)
  • detectivity

  • Detektivität

  • diode

  • diode Resistance

  • diodenwiderstand

  • Europium

  • nahes Infrarot

  • near infrared

  • photodiode

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