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Parameter extraction for HBT's temperature dependent large signal equivalent circuit model

: Baureis, P.; Seitzer, D.


Institute of Electrical and Electronics Engineers -IEEE-:
15th Annual GaAs IC Symposium 1993. Technical Digest
New York/N.Y.: IEEE, 1993
ISBN: 0-7803-1393-3
ISBN: 0-7803-1394-1
ISBN: 0-7803-1395-X
GaAs IC Symposium <15, 1993, San Jose/Calif.>
Conference Paper
Fraunhofer IIS A ( IIS) ()
HBT; large signal model; parameter extraction; Parameterextraktion; Temperatur; temperature

An eleven node large signal HBT model in hybrid-pi configuration is investigated which is derived from HBT technology. This is the first circuit simulation model where the temperature is introduced as a variable simulation parameter using the concept of thermal resistance and pseudotemperature to account for the temperature dependent thermal conductivity of GaAs. The temperature and bias dependence of key model parameters - thermal resistance, transit time, emitter resistance, base-emitter and base-collector junction parameters - are extracted analytically from measured DC and S-parameter data in the temperature range from 20 deg C to 160 deg C using on-wafer thermochuk measurements. The devices have ft and fmax values of 40 GHz each. The verification of the proposed model is carried out on a simple oscillator circuit at 4.7 GHz, where the temperature dependence of oscillation frequency and ouput power of the first three harmonics is compared to measured data.