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P-dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers.

Einbau von p-Dotierung und deren Einfluss auf die Gewinn- und Dämpfungseigenschaften in GaAs-basierenden verspannten MQW-Hochgeschwindigkeits-Lasern
 

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Materials Science and Engineering, B. Solid state materials for advanced technology 21 (1993), pp.232-236
ISSN: 0921-5107
English
Journal Article
Fraunhofer IAF ()
Dämpfung; damping; DC laser characteristics; DC-Lasereigenschaft; GaAs; gain; Gewinn; high-speed modulation; Hochgeschwindigkeitsmodulation; MBE; SIMS

Abstract
We investigate p-dopant incorporation and the influence of p-doping on the gain and damping behaviour in GaAs-based strained multiple quantum well lasers. By adding 5x10high18-2x10high19 cmhigh-3 beryllium doping to the active region of In0.35Ga0.65As/GaAs strained multiple quantum well lasers (4 QW's), we are able to demonstrate both very efficient high-speed modulation (20 GHz at a DC bias current of 50 mA) and the first semiconductor lasers to achieve a direct modulation bandwidth of 30 GHz under DC bias (heat-sink temperature is equal 25 degree C).

: http://publica.fraunhofer.de/documents/PX-27864.html