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Overlay performance of an advanced X-ray stepper (XRS 200)

 
: Gabeli, F.; Kucinski, A.; Simon, K.; Scheunemann, H.U.

:

Microelectronic engineering 17 (1992), No.1-4, pp.203-208
ISSN: 0167-9317
International Conference on Microlithography: Microcircuit Engineering (ME) <17, 1991, Rome>
English
Conference Paper
Fraunhofer ISIT ()
X-ray lithography

Abstract
Stepper related contributions to the overlay budget, such as alignment accuracy and displacements during pattern replication were investigated. By improving the alignment system, a value of 70 nm (mean+3 sigma) was realized. Displacement errors induced by the stepper mechanism during pattern replication found to be in the range of 35 nm (3 sigma). This value was improved using a wafer chuck with high flatness. Summerizing the results, the total overlay contribution of the stepper (including alignment) is 75 nm (mean+3 sigma)

: http://publica.fraunhofer.de/documents/PX-27813.html