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3D simulation of tungsten low-pressure chemical vapor deposition in contact holes

: Bär, E.; Lorenz, J.


Applied surface science 91 (1995), pp.321-325
ISSN: 0169-4332
European Workshop on Materials for Advanced Metallization (MAM) <1, 1995, Radebeul>
Conference Paper
Fraunhofer IIS B ( IISB) ()

We present a new method for three-dimensional (3D) simulation of low- pressure chemical vapor deposition in arbitrary geometry's using A segment-based topography discretization with triangle's combined with the calculation of particle fluxes to the water surface. The simulation program is applied to tungsten LPCVD using the reduction of tungsten hexafluoride (F6) by silane (SiH). We found that an approach in which the redistribution of the SiH4 molecules is simulated and a constant reaction probability after collision of a SiH4 molecule with the surface is assumed allows the simulation of this process with a reaction probability which is consistent with thermodynamic calculations. A comparison between a simulated 3D profile and experimental data from tungsten LPCVD in a contact hole shows very good agreement between experiment and simulation.