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Origin of the D-band photoluminescence in silicon

: Weronek, K.; Weber, J.; Buchner, R.

Werne, J.H.; Strunk, H.P.:
Springer Proceedings in Physics. Vol.54
Berlin: Springer, 1991 (Springer Proceedings in Physics 54)
ISBN: 3-540-53613-2
Polycrystalline Semiconductors <2, 1990, Schwäbisch Hall>
Conference Paper
Fraunhofer IFT; 2000 dem IZM eingegliedert
D-band; dislocation; impurity; photoluminescence; Photolumineszenz; recombination; Silizium; Versetzung; Verunreinigung

The D-band recombination in Si is found to be independent from impurities trapped at dislocations. On the contrary, deliberate contamination of high purity Si samples which contain dislocations results in a drastic reduction of the D-band photoluminescence in the case of Fe and Cu, whereas other impurities, e.g. Ni, lead to no detectable changes in the spectrum.