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  4. 3D CMOS devices in recrystallized silicon
 
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1990
Journal Article
Title

3D CMOS devices in recrystallized silicon

Abstract
A 2 mym scale three-dimensional CMOS process has been developed which allows the fabrication of MOS devices in two independent active device layers. NMOS transistors have been fabricated in the substrate and CMOS devices, including inverters and ring oscillators, in a thin laserrecrystallized polysilicon layer. The processing parameters were determined carefully in order to obtain a monocrystalline top layer and to avoid any damage to the underlying devices already existing.
Author(s)
Seitz, S.
Weber, J.
Seegebrecht, P.
Wel, W. van der
Buchner, R.
Haberger, K.
Journal
Microelectronics journal  
Language
English
IFT  
Keyword(s)
  • 3D-Integration

  • CMOS

  • crystallization

  • Kristallisation

  • laser

  • MOS

  • Polysilicium

  • SOI

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