Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Optimization of 3D-SMODFETs on GaAs and InP substrates with a simple analytical model

Optimierung von 3D-SMODFETs auf GaAs- und InP-Substraten mit einem einfachen analytischen Modell
 
: Martin, G.H.; Seaford, K.L.; Spencer, R.; Braunstein, J.; Eastman, L.F.

:

Maracas, G.N. ; IEEE Communications Society; Cornell University, Ithaca/NY:
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits 1995. Proceedings
New York: IEEE, 1995
ISBN: 0-7803-2442-0
pp.132-140
Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits <1995, Ithaca/NY>
English
Conference Paper
Fraunhofer IAF ()
GaAs; InP; SMODFETs

Abstract
Using a simple analytical method followed by a computer program that solves the detailed quantum-mechanics, it is possible to design the optimum material structures for pseudomorphic MODFETs with full channels. Using a MODFET with a pseudomorphic graded channel, and atomic planar doped pseudomorphic barriers on both sides of the channel, it is possible to achieve record-breaking electron sheet densities in the channel without having carriers in the barrier (Double-Doped Double-Strained MODFET, 3D-SMODFET). This theory is used to predicted the optimum material designs (quantum-mechanical solution) for GaAs, InP and GaN based structures.

: http://publica.fraunhofer.de/documents/PX-27506.html