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Optimised gate-drain feedback capacitance of W-band high gain passivated 0.15 mu m InAlAs/InGaAs HEMTs

Optimierte Gate-drain Rückkopplungskapazität von passivierten 0.15 mu m InAlAs/InGaAs HEMTs


Electronics Letters 34 (1998), No.17, pp.1703-1705
ISSN: 0013-5194
Journal Article
Fraunhofer IAF ()
feedback capacitance; HEMT; passivation; Passivierung; Rückkopplungskapazität

A 0.15 mu m high gain, passivated, double-side-doped InAlAs/ InGaAs HEMT with high uniformity over 2in InP substrates has been developed. A measured gain of 12.5dB at 94GHz was achieved at a drain bias of 2V, giving an f(max) exceeding 400GHz. This high gain is mainly related to the extremely low gate-drain feedback capacitance, for which the physical origins will be demonstrated. Using this technology, a single stage amplifier with 10.3dB gain at 88GHz and a distributed amplifier with 1 1 dB gain and 89GHz bandwidth were fabricated.