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3D - CMOS devices in recrystallized silicon

: Buchner, R.; Haberger, K.; Seitz, D.; Weber, J.; Wel, W. van der; Seegebrecht, P.

MIEL '89
MIEL <1989, Nis>
Conference Paper
Fraunhofer IFT; 2000 dem IZM eingegliedert
3D-Integration; CMOS; Kristallisation; laser; MOS; SOI; substrate damage

A 2 mym 3D-CMOS process has been developed which allows the fabrication of MOS devices in two independent active device layers. NMOS transistors have been fabricated in the substrate and CMOS devices as inverters and ring oscillators in a thin laser recrystallized polysilicon layer. The processing parameters were determined carefully in order to obtain a monocrystalline top layer and to avoid any damage to the underlying devices already existing.