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  4. Optically pumped, indirect-gap Al(x)Ga(1-x)As lasers
 
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1997
Journal Article
Title

Optically pumped, indirect-gap Al(x)Ga(1-x)As lasers

Other Title
Optisch gepumpte Al(x)Ga(1-x)As-Laser mit indirekter Bandlücke
Abstract
We demonstrate optically pumped lasers with active layers of indirect-gap Al(x)Ga(1-x)As operating up to room temperature. The emission wavelength is 609 nm at 20 K and 639 nm at 300 K, respectively. The laser threshold shows a weak sensitivity on the lattice temperature. The relevant parameters of the electron-hole plasma close to threshold are determined from gain spectroscopy using the variable stripe-length method.
Author(s)
Wörner, A.
Westphäling, R.
Kalt, H.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Applied physics. A  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • heterostructure

  • Heterostruktur

  • III-V Halbleiter

  • III-V semiconductors

  • stimulated emission

  • stimulierte Emission

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