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Optically pumped, indirect-gap Al(x)Ga(1-x)As lasers

Optisch gepumpte Al(x)Ga(1-x)As-Laser mit indirekter Bandlücke

: Wörner, A.; Westphäling, R.; Kalt, H.; Köhler, K.

	Applied physics. A 64 (1997), pp.73-76 ISSN: 0340-3793 ISSN: 0721-7250 ISSN: 0947-8396

	English
	Journal Article
	Fraunhofer IAF ()
	heterostructure; Heterostruktur; III-V Halbleiter; III-V semiconductors; stimulated emission; stimulierte Emission

Abstract
We demonstrate optically pumped lasers with active layers of indirect-gap Al(x)Ga(1-x)As operating up to room temperature. The emission wavelength is 609 nm at 20 K and 639 nm at 300 K, respectively. The laser threshold shows a weak sensitivity on the lattice temperature. The relevant parameters of the electron-hole plasma close to threshold are determined from gain spectroscopy using the variable stripe-length method.

: http://publica.fraunhofer.de/documents/PX-27391.html