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Optically pumped, indirect-gap Al(x)Ga(1-x)As lasers

Optisch gepumpte Al(x)Ga(1-x)As-Laser mit indirekter Bandlücke
: Wörner, A.; Westphäling, R.; Kalt, H.; Köhler, K.

Applied physics. A 64 (1997), pp.73-76
ISSN: 0340-3793
ISSN: 0721-7250
ISSN: 0947-8396
Journal Article
Fraunhofer IAF ()
heterostructure; Heterostruktur; III-V Halbleiter; III-V semiconductors; stimulated emission; stimulierte Emission

We demonstrate optically pumped lasers with active layers of indirect-gap Al(x)Ga(1-x)As operating up to room temperature. The emission wavelength is 609 nm at 20 K and 639 nm at 300 K, respectively. The laser threshold shows a weak sensitivity on the lattice temperature. The relevant parameters of the electron-hole plasma close to threshold are determined from gain spectroscopy using the variable stripe-length method.