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Optical detection of resonant tunneling in GaAs/AlAs superlattices.
Optische Detektion von resonantem Tunneln in GaAs/AlAs Übergittern
We report on the investigation of the miniband transport regime in GaAs-AlAs superlattices by electrical time-of-flight experiments. The temperature dependence of the low-field drift mobility is used to obtain information about the underlying transport mechanisms. The photocurrent as a function of the applied field can be fitted over a wide temperature range with a modified Kazarinov-Suris model.